By Warren S. Warren
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"The e-book comprehensively covers all of the present and the rising parts of the physics and the know-how of excessive permittivity gate dielectric fabrics, together with, subject matters equivalent to MOSFET fundamentals and features, hafnium-based gate dielectric fabrics, Hf-based gate dielectric processing, steel gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack fabrics, ternary hafnia and lanthania established high-k gate stack motion pictures, crystalline high-k oxides, excessive mobility substrates, and parameter extraction.
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Advances in Magnetic and Optical Resonance: 19 by Warren S. Warren